The gettering behaviors of Fe into Si with and without a p+ layer are investigated by deep-level transient spectroscopy. The samples contaminated with Fe in a wide concentration range were annealed at 600°C to induce gettering. The surface-layer gettering behaviors of Fe for the sample without the p+ layer strongly depend on the Fe contamination level, in which the surface-layer gettering is not effective for the sample with low-level contamination at a concentration of less than 1 × 10 13cm-3 but effective for the sample with middle-level contamination at a concentration of (1-5) × 1013cm -3. In contrast, the samples with the p+ layer show effective gettering for low- and middle-level contaminations. The gettering mechanisms of Fe in Si without and with the p+ layer are discussed in detail.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - Apr 7 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)