Role of hydrogen atoms in anodized porous silicon

T. Ito, H. Kiyama, T. Yasumatsu, H. Watabe, A. Hiraki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Hydrogen atoms chemisorbed in anodized porous silicon (PS) during anodization in a HF solution have been investigated by using both experimental techniques and a semi-empirical calculation method. The results show important roles of chemisorbed H atoms in PS on anodization mechanisms and a slight expansion of Si-Si bond length, as in the case of the structural change and low-temperature oxidation process of PS films previously reported. Fine structures observed in the infrared absorption band of the Si-H stretching vibrations can be related to charge redistributions of H-chemisorbed Si atoms which were calculated for various clusters with SinHm using the AM1 method. The calculation results on the Si-Si bond length in the clusters are also consistently explained in relation to slight increases in the lattice constant of PS: the origin comes from Si charges attracted by chemisorbed H atoms on the pore walls.

Original languageEnglish
Pages (from-to)535-539
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Issue number1-4
Publication statusPublished - Apr 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Role of hydrogen atoms in anodized porous silicon'. Together they form a unique fingerprint.

Cite this