Role of Pr segregation in acceptor-state formation at ZnO grain boundaries

Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, Yuichi Ikuhara

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Abstract

The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.

Original languageEnglish
Article number106802
JournalPhysical Review Letters
Volume97
Issue number10
DOIs
Publication statusPublished - Sep 11 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Sato, Y., Buban, J. P., Mizoguchi, T., Shibata, N., Yodogawa, M., Yamamoto, T., & Ikuhara, Y. (2006). Role of Pr segregation in acceptor-state formation at ZnO grain boundaries. Physical Review Letters, 97(10), [106802]. https://doi.org/10.1103/PhysRevLett.97.106802