Role of surface effects on silicon carbide polytype stability

Frédéric Mercier, Shin Ichi Nishizawa

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We investigated with ab initio calculations the energetics of the most common silicon carbide (SiC) polytypes. We considered the (0001) Si face and the (0001̄) C face of 3C-, 6H-, 4H- and 2H-SiC. Our investigation reveals that the energy differences among SiC polytypes are enhanced at the surface with respect to the bulk. We discuss the relevant role played by the surface for the crystal growth of SiC.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalJournal of Crystal Growth
Volume360
Issue number1
DOIs
Publication statusPublished - Dec 1 2012
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
Crystallization
Crystal growth
crystal growth
silicon carbide
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Role of surface effects on silicon carbide polytype stability. / Mercier, Frédéric; Nishizawa, Shin Ichi.

In: Journal of Crystal Growth, Vol. 360, No. 1, 01.12.2012, p. 189-192.

Research output: Contribution to journalArticle

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