TY - GEN
T1 - Roles of boron in growth of diamond grains in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition
AU - Ohmagari, Shinya
AU - Katamune, Yuki
AU - Lchinose, Hikaru
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This work was partially supported by Nanotechnology Network Japan (Kyushu Synchrotron Light Research Center, Proposal Nos. 081152N and 090423N) and Advanced Low Carbon Technology Research and Development Program, Japan Science and Technology Agency. The authors would like to express their deep gratitude to Drs. Eiichi Kobayashi, Hiroyuki Setoyama, Kazushi Sumitani and Ryota Ohtani for their professional supports in the NEXAFS and XRD measurements. The first author S.O. was supported by Research fellowship of the Japan Society for the Promotion of Science (JSPS) for Young Scientists.
PY - 2012
Y1 - 2012
N2 - Boron doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition were structurally investigated. With an increase in the boron content, the grain size was increased from 5 to 23 nm accompanying by the lattice constant approaching to that of bulk diamond. The near-edge X-ray absorption fine-structure revealed that boron atoms are preferentially distributed into grain boundaries. On the basis of the results, the roles of the boron atoms in the enhanced crystalline growth are discussed. We consider that the crystalline growth posterior to the nucleation is facilitated by boron atoms existing neighbor to UNCD grains or by boron-containing energetic species in plasma.
AB - Boron doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition were structurally investigated. With an increase in the boron content, the grain size was increased from 5 to 23 nm accompanying by the lattice constant approaching to that of bulk diamond. The near-edge X-ray absorption fine-structure revealed that boron atoms are preferentially distributed into grain boundaries. On the basis of the results, the roles of the boron atoms in the enhanced crystalline growth are discussed. We consider that the crystalline growth posterior to the nucleation is facilitated by boron atoms existing neighbor to UNCD grains or by boron-containing energetic species in plasma.
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U2 - 10.1557/opl.2012.339
DO - 10.1557/opl.2012.339
M3 - Conference contribution
AN - SCOPUS:84865005884
SN - 9781605113722
T3 - Materials Research Society Symposium Proceedings
SP - 69
EP - 74
BT - Diamond Electronics and Biotechnology - Fundamentals to Applications V
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -