Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O: Comparison of conventional and ultra-high-vacuum sputtering

Takaya Miyase, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We investigated roles of hydrogen on physical properties of a-IGZO films and thin-film transistors (TFTs) by comparing standard and ultra-high vacuum (UHV) sputtering systems. It was confirmed that the impurity hydrogens come mainly from the residual gas in the deposition chamber and the molecules adsorbed to the surface of the sputtering target. It was found impurity hydrogen has unfavorable effects as follows; (i) enhances selective Zn desorption during film deposition, and (ii) weakens chemical bonds of the resulting film, causing temperature instability. On the other hand, the UHV a-IGZO films with less hydrogen had low density and exhibited structural instability, suggesting that some hydrogens would have a favorable effect to enhance structural relaxation rate and to form denser and more stable structures during film deposition at room temperature. The revealed hydrogen effects are discussed in relation to those in amorphous silicon and silicon dioxide.

Original languageEnglish
Pages (from-to)Q3085-Q3090
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number9
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes

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Amorphous semiconductors
Ultrahigh vacuum
Sputtering
Hydrogen
Impurities
Structural relaxation
Chemical bonds
Thin film transistors
Amorphous silicon
Silicon Dioxide
Oxide semiconductors
Desorption
Physical properties
Gases
Silica
Temperature
Molecules

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O : Comparison of conventional and ultra-high-vacuum sputtering. / Miyase, Takaya; Watanabe, Ken; Sakaguchi, Isao; Ohashi, Naoki; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio.

In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, 01.01.2014, p. Q3085-Q3090.

Research output: Contribution to journalArticle

Miyase, T, Watanabe, K, Sakaguchi, I, Ohashi, N, Domen, K, Nomura, K, Hiramatsu, H, Kumomi, H, Hosono, H & Kamiya, T 2014, 'Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O: Comparison of conventional and ultra-high-vacuum sputtering', ECS Journal of Solid State Science and Technology, vol. 3, no. 9, pp. Q3085-Q3090. https://doi.org/10.1149/2.015409jss
Miyase, Takaya ; Watanabe, Ken ; Sakaguchi, Isao ; Ohashi, Naoki ; Domen, Kay ; Nomura, Kenji ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio. / Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O : Comparison of conventional and ultra-high-vacuum sputtering. In: ECS Journal of Solid State Science and Technology. 2014 ; Vol. 3, No. 9. pp. Q3085-Q3090.
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AU - Ohashi, Naoki

AU - Domen, Kay

AU - Nomura, Kenji

AU - Hiramatsu, Hidenori

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