Abstract
We investigated roles of hydrogen on physical properties of a-IGZO films and thin-film transistors (TFTs) by comparing standard and ultra-high vacuum (UHV) sputtering systems. It was confirmed that the impurity hydrogens come mainly from the residual gas in the deposition chamber and the molecules adsorbed to the surface of the sputtering target. It was found impurity hydrogen has unfavorable effects as follows; (i) enhances selective Zn desorption during film deposition, and (ii) weakens chemical bonds of the resulting film, causing temperature instability. On the other hand, the UHV a-IGZO films with less hydrogen had low density and exhibited structural instability, suggesting that some hydrogens would have a favorable effect to enhance structural relaxation rate and to form denser and more stable structures during film deposition at room temperature. The revealed hydrogen effects are discussed in relation to those in amorphous silicon and silicon dioxide.
| Original language | English |
|---|---|
| Pages (from-to) | Q3085-Q3090 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 3 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Jan 1 2014 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O : Comparison of conventional and ultra-high-vacuum sputtering. / Miyase, Takaya; Watanabe, Ken; Sakaguchi, Isao; Ohashi, Naoki; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio.
In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 9, 01.01.2014, p. Q3085-Q3090.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Roles of hydrogen in amorphous oxide semiconductor In-Ga-Zn-O
T2 - Comparison of conventional and ultra-high-vacuum sputtering
AU - Miyase, Takaya
AU - Watanabe, Ken
AU - Sakaguchi, Isao
AU - Ohashi, Naoki
AU - Domen, Kay
AU - Nomura, Kenji
AU - Hiramatsu, Hidenori
AU - Kumomi, Hideya
AU - Hosono, Hideo
AU - Kamiya, Toshio
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We investigated roles of hydrogen on physical properties of a-IGZO films and thin-film transistors (TFTs) by comparing standard and ultra-high vacuum (UHV) sputtering systems. It was confirmed that the impurity hydrogens come mainly from the residual gas in the deposition chamber and the molecules adsorbed to the surface of the sputtering target. It was found impurity hydrogen has unfavorable effects as follows; (i) enhances selective Zn desorption during film deposition, and (ii) weakens chemical bonds of the resulting film, causing temperature instability. On the other hand, the UHV a-IGZO films with less hydrogen had low density and exhibited structural instability, suggesting that some hydrogens would have a favorable effect to enhance structural relaxation rate and to form denser and more stable structures during film deposition at room temperature. The revealed hydrogen effects are discussed in relation to those in amorphous silicon and silicon dioxide.
AB - We investigated roles of hydrogen on physical properties of a-IGZO films and thin-film transistors (TFTs) by comparing standard and ultra-high vacuum (UHV) sputtering systems. It was confirmed that the impurity hydrogens come mainly from the residual gas in the deposition chamber and the molecules adsorbed to the surface of the sputtering target. It was found impurity hydrogen has unfavorable effects as follows; (i) enhances selective Zn desorption during film deposition, and (ii) weakens chemical bonds of the resulting film, causing temperature instability. On the other hand, the UHV a-IGZO films with less hydrogen had low density and exhibited structural instability, suggesting that some hydrogens would have a favorable effect to enhance structural relaxation rate and to form denser and more stable structures during film deposition at room temperature. The revealed hydrogen effects are discussed in relation to those in amorphous silicon and silicon dioxide.
UR - http://www.scopus.com/inward/record.url?scp=84990949405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990949405&partnerID=8YFLogxK
U2 - 10.1149/2.015409jss
DO - 10.1149/2.015409jss
M3 - Article
AN - SCOPUS:84990949405
VL - 3
SP - Q3085-Q3090
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 9
ER -