Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The feasibility of room-temperature (RT) bonding of vertical-cavity surface-emitting laser (VCSEL) chips on silicon (Si) substrates with Au microbumps was demonstrated by Au-Au surface-activated bonding. The diameter at the top, the height, and the pitch of Au microbumps measured approximately 5, 2, and 10μm, respectively. Following activation of the Au surfaces with argon radio-frequency plasma, Au-Au bonding was carried out using contact at RT in ambient air. The measured results of light-current-voltage (L-I-V) characteristics indicated no significant degradation of the VCSEL chips after bonding.

Original languageEnglish
Pages (from-to)1122011-1122012
Number of pages2
JournalApplied Physics Express
Volume1
Issue number11
DOIs
Publication statusPublished - Nov 2008

Fingerprint

Surface emitting lasers
surface emitting lasers
chips
Silicon
cavities
air
silicon
room temperature
Substrates
Air
Temperature
Current voltage characteristics
Contacts (fluid mechanics)
Argon
radio frequencies
Chemical activation
argon
activation
degradation
Plasmas

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air. / Takigawa, Ryo; Higurashi, Eiji; Suga, Tadatomo; Sawada, Renshi.

In: Applied Physics Express, Vol. 1, No. 11, 11.2008, p. 1122011-1122012.

Research output: Contribution to journalArticle

Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi. / Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air. In: Applied Physics Express. 2008 ; Vol. 1, No. 11. pp. 1122011-1122012.
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