Abstract
Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.
| Original language | English |
|---|---|
| Pages (from-to) | 4868-4871 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 8 B |
| Publication status | Published - Aug 15 1999 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma. / Gao, Dawei; Furukawa, Katsuhiko; Nakashima, Hiroshi; Gao, Junsi; Wang, Junli; Muraoka, Katsunori.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4868-4871.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma
AU - Gao, Dawei
AU - Furukawa, Katsuhiko
AU - Nakashima, Hiroshi
AU - Gao, Junsi
AU - Wang, Junli
AU - Muraoka, Katsunori
PY - 1999/8/15
Y1 - 1999/8/15
N2 - Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.
AB - Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.
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M3 - Article
AN - SCOPUS:0033176767
VL - 38
SP - 4868
EP - 4871
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 B
ER -