Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 B|
|Publication status||Published - Aug 15 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)