Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma

Dawei Gao, Katsuhiko Furukawa, Hiroshi Nakashima, Junsi Gao, Junli Wang, Katsunori Muraoka

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.

    Original languageEnglish
    Pages (from-to)4868-4871
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number8 B
    Publication statusPublished - Aug 15 1999

    Fingerprint

    Electron cyclotron resonance
    Electroluminescence
    electron cyclotron resonance
    Silicon nitride
    Passivation
    silicon nitrides
    electroluminescence
    passivity
    Sputtering
    sputtering
    Plasmas
    room temperature
    Temperature
    Thermal desorption spectroscopy
    Bond number
    Ellipsometry
    moisture
    ellipsometry
    Fourier transform infrared spectroscopy
    gas flow

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    abstract = "Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.",
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    AU - Gao, Dawei

    AU - Furukawa, Katsuhiko

    AU - Nakashima, Hiroshi

    AU - Gao, Junsi

    AU - Wang, Junli

    AU - Muraoka, Katsunori

    PY - 1999/8/15

    Y1 - 1999/8/15

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    AB - Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.

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