Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma

Dawei Gao, Katsuhiko Furukawa, Hiroshi Nakashima, Junsi Gao, Junli Wang, Katsunori Muraoka

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si-N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing. copy; 1999 Publication Board, Japanese Journal of Applied Physics.

    Original languageEnglish
    Pages (from-to)4868-4871
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume38
    Issue number8 B
    DOIs
    Publication statusPublished - Aug 15 1999

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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