Room temperature deposition of silicon oxynitride films with low stress using sputtering-type electron cyclotron resonance plasmas

D. Gao, Katsuhiko Furukawa, Hiroshi Nakashima, J. Gao, J. Wang, K. Muraoka

    Research output: Contribution to journalConference article

    1 Citation (Scopus)


    Silicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOxNy film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

    Original languageEnglish
    Pages (from-to)457-462
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Publication statusPublished - Dec 11 2000
    EventThin Films-Stress and Machanical Properties VIII - Boston, MA, USA
    Duration: Nov 29 1999Dec 3 1999


    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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