Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering

T. Yoshitake, D. Nakagauchi, T. Ogawa, M. Itakura, N. Kuwano, Y. Tomokiyo, T. Kajiwara, K. Nagayama

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52 Citations (Scopus)


Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.

Original languageEnglish
Article number262505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - Jun 27 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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