Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering

Tsuyoshi Yoshitake, D. Nakagauchi, T. Ogawa, Masaru Itakura, N. Kuwano, Y. Tomokiyo, T. Kajiwara, K. Nagayama

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Ferromagnetic Fe3 Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3 Si (111) ∥Si (111) with Fe3 Si [1 1- 0] ∥Si [1- 10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3 Si was confirmed to possess a B2 structure and not a D O3 one. The film showed a saturation magnetization value of 960 emu cm3, which was slightly lower than that of bulk D O3 - Fe3 Si. It was observed that the magnetization easy axis was along the [1 1- 0] direction in the film plane.

Original languageEnglish
Article number262505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number26
DOIs
Publication statusPublished - Jun 27 2005

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sputtering
direct current
magnetization
room temperature
extinction
x ray diffraction
saturation
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering. / Yoshitake, Tsuyoshi; Nakagauchi, D.; Ogawa, T.; Itakura, Masaru; Kuwano, N.; Tomokiyo, Y.; Kajiwara, T.; Nagayama, K.

In: Applied Physics Letters, Vol. 86, No. 26, 262505, 27.06.2005, p. 1-3.

Research output: Contribution to journalArticle

Yoshitake, Tsuyoshi ; Nakagauchi, D. ; Ogawa, T. ; Itakura, Masaru ; Kuwano, N. ; Tomokiyo, Y. ; Kajiwara, T. ; Nagayama, K. / Room-temperature epitaxial growth of ferromagnetic Fe3 Si films on Si(111) by facing target direct-current sputtering. In: Applied Physics Letters. 2005 ; Vol. 86, No. 26. pp. 1-3.
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AU - Kajiwara, T.

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