Room-temperature epitaxy of indium tin oxide (ITO) thin films was achieved on Si(1 1 1) substrates with an epitaxial CeO2 ultrathin buffer using a pulsed laser deposition technique. The epitaxial CeO2 buffer layer was also grown at room temperature. Reflection high-energy electron diffraction and pole figure X-ray diffraction analyses confirmed the formation of a double heteroepitaxial structure of ITO(1 1 1)/CeO2(1 1 1)/Si(1 1 1) with the epitaxial relationship of [- 110]ITO//[- 110]CeO2//[1-10]Si. The junction of [ITO: 100 nm thick/CeO2: 3 nm thick/p-Si(1 1 1)] fabricated at room temperature exhibited solar cell properties.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry