Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

J. Tashiro, A. Sasaki, S. Akiba, S. Satoh, T. Watanabe, H. Funakubo, M. Yoshimoto

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Room-temperature epitaxy of indium tin oxide (ITO) thin films was achieved on Si(1 1 1) substrates with an epitaxial CeO2 ultrathin buffer using a pulsed laser deposition technique. The epitaxial CeO2 buffer layer was also grown at room temperature. Reflection high-energy electron diffraction and pole figure X-ray diffraction analyses confirmed the formation of a double heteroepitaxial structure of ITO(1 1 1)/CeO2(1 1 1)/Si(1 1 1) with the epitaxial relationship of [- 110]ITO//[- 110]CeO2//[1-10]Si. The junction of [ITO: 100 nm thick/CeO2: 3 nm thick/p-Si(1 1 1)] fabricated at room temperature exhibited solar cell properties.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalThin Solid Films
Volume415
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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