Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering

Koichi Matsushima, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposited at high temperature of 350-450oC grow three dimensionally. Growth mode is changed from two-dimensional growth mode to three-dimensional one, because the critical thickness where film strain begin to relax decreases with increasing the deposition temperature. At high deposition temperatures, the number of point defects in ZION films decreases because migration of adatoms on the growing surface is enhanced. The strain energy in ZION films increases with increasing the deposition temperature, since the strain energy is not released by point defects. Therefore, lattice relaxation for the higher deposition temperature begins at the smaller film thickness to release the strain energy. As a result, ZION films with atomically-flat surface were obtained even at RT.

Original languageEnglish
Pages (from-to)115-119
Number of pages5
JournalMRS Advances
Volume1
Issue number2
DOIs
Publication statusPublished - Jan 1 2016

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

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