Room-temperature ferrimagnetic semiconductor 0.6FeTiO3 ̇ 0.4Fe2O3 solid solution thin films

Hajime Hojo, Koji Fujita, Katsuhisa Tanaka, Kazuyuki Hirao

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29 Citations (Scopus)

Abstract

The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTi O3 0.4 Fe2 O3 solid solution on α- Al2 O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R 3- symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0× 10-3 Pa and substrate temperature of 700 °C. The thin film with the ordered phase is an n -type semiconductor and ferrimagnetic with the Curie temperature >400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized.

Original languageEnglish
Article number142503
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
Publication statusPublished - Oct 16 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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