Room-temperature ferrimagnetic semiconductor 0.6FeTiO3 ̇ 0.4Fe2O3 solid solution thin films

Hajime Hojo; Koji Fujita; Katsuhisa Tanaka; Kazuyuki Hirao

doi:10.1063/1.2357547

Room-temperature ferrimagnetic semiconductor 0.6FeTiO₃ ̇ 0.4Fe₂O₃ solid solution thin films

Hajime Hojo, Koji Fujita, Katsuhisa Tanaka, Kazuyuki Hirao

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTi O3 0.4 Fe2 O3 solid solution on α- Al2 O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R 3- symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0× 10-3 Pa and substrate temperature of 700 °C. The thin film with the ordered phase is an n -type semiconductor and ferrimagnetic with the Curie temperature >400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized.

Original language	English
Article number	142503
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2357547
Publication status	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2357547

Cite this

@article{b00fbd2f018d4923a2136186c882c236,

title = "Room-temperature ferrimagnetic semiconductor 0.6FeTiO3{\. } 0.4Fe2O3 solid solution thin films",

abstract = "The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTi O3 0.4 Fe2 O3 solid solution on α- Al2 O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R 3- symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0× 10-3 Pa and substrate temperature of 700 °C. The thin film with the ordered phase is an n -type semiconductor and ferrimagnetic with the Curie temperature >400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized.",

author = "Hajime Hojo and Koji Fujita and Katsuhisa Tanaka and Kazuyuki Hirao",

note = "Funding Information: The authors thank M. Suzuki of Kyoto University for Hall effect measurements and Y. Maeno and H. Yaguchi of Kyoto University for the 7T SQUID measurements. They are also grateful to H. Jain of Lehigh University for a careful reading of this letter. One of the authors (K.F.) acknowledges financial support from Yazaki Foundation. ",

year = "2006",

doi = "10.1063/1.2357547",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Room-temperature ferrimagnetic semiconductor 0.6FeTiO3 ̇ 0.4Fe2O3 solid solution thin films

AU - Hojo, Hajime

AU - Fujita, Koji

AU - Tanaka, Katsuhisa

AU - Hirao, Kazuyuki

N1 - Funding Information: The authors thank M. Suzuki of Kyoto University for Hall effect measurements and Y. Maeno and H. Yaguchi of Kyoto University for the 7T SQUID measurements. They are also grateful to H. Jain of Lehigh University for a careful reading of this letter. One of the authors (K.F.) acknowledges financial support from Yazaki Foundation.

PY - 2006

Y1 - 2006

N2 - The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTi O3 0.4 Fe2 O3 solid solution on α- Al2 O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R 3- symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0× 10-3 Pa and substrate temperature of 700 °C. The thin film with the ordered phase is an n -type semiconductor and ferrimagnetic with the Curie temperature >400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized.

AB - The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTi O3 0.4 Fe2 O3 solid solution on α- Al2 O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R 3- symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0× 10-3 Pa and substrate temperature of 700 °C. The thin film with the ordered phase is an n -type semiconductor and ferrimagnetic with the Curie temperature >400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized.

UR - http://www.scopus.com/inward/record.url?scp=33749549757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749549757&partnerID=8YFLogxK

U2 - 10.1063/1.2357547

DO - 10.1063/1.2357547

M3 - Article

AN - SCOPUS:33749549757

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142503

ER -

Room-temperature ferrimagnetic semiconductor 0.6FeTiO₃ ̇ 0.4Fe₂O₃ solid solution thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this