Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure

Hiroyuki Hayashi, Rong Huang, Hidekazu Ikeno, Fumiyasu Oba, Satoru Yoshioka, Isao Tanaka, Saki Sonoda

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Abstract

Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.

Original languageEnglish
Article number181903
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - Nov 13 2006
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hayashi, H., Huang, R., Ikeno, H., Oba, F., Yoshioka, S., Tanaka, I., & Sonoda, S. (2006). Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure. Applied Physics Letters, 89(18), [181903]. https://doi.org/10.1063/1.2369541