Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure

Hiroyuki Hayashi; Rong Huang; Hidekazu Ikeno; Fumiyasu Oba; Satoru Yoshioka; Isao Tanaka; Saki Sonoda

doi:10.1063/1.2369541

Room temperature ferromagnetism in Mn-doped γ- Ga₂O ₃ with spinel structure

Hiroyuki Hayashi, Rong Huang, Hidekazu Ikeno, Fumiyasu Oba, Satoru Yoshioka, Isao Tanaka, Saki Sonoda

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.

Original language	English
Article number	181903
Journal	Applied Physics Letters
Volume	89
Issue number	18
DOIs	https://doi.org/10.1063/1.2369541
Publication status	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2369541

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title = "Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure",

abstract = "Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.",

author = "Hiroyuki Hayashi and Rong Huang and Hidekazu Ikeno and Fumiyasu Oba and Satoru Yoshioka and Isao Tanaka and Saki Sonoda",

note = "Funding Information: This work was supported by three projects by Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT). They are the computational materials science unit in Kyoto University, the Grant-in-Aid for Scientific Research (A), and the 21st Century COE program. The NEXAFS experiments at KEK-PF were made under the Proposal No. 2005G212. SQUID measurements were made at Low Temperature Center in Osaka University.",

year = "2006",

doi = "10.1063/1.2369541",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

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T1 - Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure

AU - Hayashi, Hiroyuki

AU - Huang, Rong

AU - Ikeno, Hidekazu

AU - Oba, Fumiyasu

AU - Yoshioka, Satoru

AU - Tanaka, Isao

AU - Sonoda, Saki

N1 - Funding Information: This work was supported by three projects by Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT). They are the computational materials science unit in Kyoto University, the Grant-in-Aid for Scientific Research (A), and the 21st Century COE program. The NEXAFS experiments at KEK-PF were made under the Proposal No. 2005G212. SQUID measurements were made at Low Temperature Center in Osaka University.

PY - 2006

Y1 - 2006

N2 - Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.

AB - Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.

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Room temperature ferromagnetism in Mn-doped γ- Ga₂O ₃ with spinel structure

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