Room-temperature gold-gold bonding method based on argon and hydrogen gas mixture atmospheric-pressure plasma treatment for optoelectronic device integration

Eiji Higurashi, Michitaka Yamamoto, Takeshi Sato, Tadatomo Suga, Renshi Sawada

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.

Original languageEnglish
Pages (from-to)339-345
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE99C
Issue number3
DOIs
Publication statusPublished - Mar 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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