Room-temperature gold-gold bonding method based on argon and hydrogen gas mixture atmospheric-pressure plasma treatment for optoelectronic device integration

Eiji Higurashi, Michitaka Yamamoto, Takeshi Sato, Tadatomo Suga, Renshi Sawada

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.

    Original languageEnglish
    Pages (from-to)339-345
    Number of pages7
    JournalIEICE Transactions on Electronics
    VolumeE99C
    Issue number3
    DOIs
    Publication statusPublished - Mar 2016

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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