Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration

Takanori Shuto, Keiichiro Iwanabe, Li Jing Qiu, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.

Original languageEnglish
Title of host publication2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages1141-1145
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States
Duration: May 28 2013May 31 2013

Other

Other2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
CountryUnited States
CityLas Vegas, NV
Period5/28/135/31/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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