Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration

Takanori Shuto; Keiichiro Iwanabe; Li Jing Qiu; Tanemasa Asano

doi:10.1109/ECTC.2013.6575717

Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration

Takanori Shuto, Keiichiro Iwanabe, Li Jing Qiu, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.

Original language	English
Title of host publication	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages	1141-1145
Number of pages	5
DOIs	https://doi.org/10.1109/ECTC.2013.6575717
Publication status	Published - 2013
Event	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States Duration: May 28 2013 → May 31 2013

Other

Other	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Country/Territory	United States
City	Las Vegas, NV
Period	5/28/13 → 5/31/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ECTC.2013.6575717

Cite this

Shuto, T, Iwanabe, K, Qiu, LJ & Asano, T 2013, Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration. in 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013., 6575717, pp. 1141-1145, 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013, Las Vegas, NV, United States, 5/28/13. https://doi.org/10.1109/ECTC.2013.6575717

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title = "Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration",

abstract = "We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.",

author = "Takanori Shuto and Keiichiro Iwanabe and Qiu, {Li Jing} and Tanemasa Asano",

year = "2013",

doi = "10.1109/ECTC.2013.6575717",

language = "English",

isbn = "9781479902330",

pages = "1141--1145",

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note = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 ; Conference date: 28-05-2013 Through 31-05-2013",

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T1 - Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration

AU - Shuto, Takanori

AU - Iwanabe, Keiichiro

AU - Qiu, Li Jing

AU - Asano, Tanemasa

PY - 2013

Y1 - 2013

N2 - We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.

AB - We show that room temperature bonding of a 332 × 268 bump array can be realized by using ultrasonic bonding of cone-shaped bump. 25 μm-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. A conventional planar electrode made of electroplated Au was used as the counter electrode. Ultrasonic bonding was carried out at room temperature in ambient air. Electrical connection test shows all bump connections with low resistance have been achieved. Heterogeneous integration of a photodiode array on InP and Si CMOS readout IC is demonstrated.

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U2 - 10.1109/ECTC.2013.6575717

DO - 10.1109/ECTC.2013.6575717

M3 - Conference contribution

AN - SCOPUS:84882804471

SN - 9781479902330

SP - 1141

EP - 1145

BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013

T2 - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013

Y2 - 28 May 2013 through 31 May 2013

ER -

Room-temperature high-density interconnection using ultrasonic bonding of cone bump for heterogeneous integration

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