TY - GEN
T1 - Room-temperature microjoining using ultrasonic bonding of compliant bump
AU - Iwanabe, Keiichiro
AU - Shuto, Takanori
AU - Noda, Kazuhiro
AU - Nakai, Seiya
AU - Asano, Tanemasa
PY - 2012/8/15
Y1 - 2012/8/15
N2 - Ultrasonic bonding was applied to cone-shaped microbump made of Au on a Si chip to perform bonding at room temperature. Array of cone-shaped microbump having 10 m in diameter and 20μm in pitch was formed on Si using photolithography and electroplating. The counter electrode was a planar electrode which was also made by using electroplating of Au. Bonding was carried out at room temperature under conventional air circumstances. It has been found that bump array whose number is over 10,000 can be electrically connected. Die share tests have revealed that bonding strength can be increased to the strength that bonding at 150°C provides.
AB - Ultrasonic bonding was applied to cone-shaped microbump made of Au on a Si chip to perform bonding at room temperature. Array of cone-shaped microbump having 10 m in diameter and 20μm in pitch was formed on Si using photolithography and electroplating. The counter electrode was a planar electrode which was also made by using electroplating of Au. Bonding was carried out at room temperature under conventional air circumstances. It has been found that bump array whose number is over 10,000 can be electrically connected. Die share tests have revealed that bonding strength can be increased to the strength that bonding at 150°C provides.
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U2 - 10.1109/LTB-3D.2012.6238081
DO - 10.1109/LTB-3D.2012.6238081
M3 - Conference contribution
AN - SCOPUS:84864856827
SN - 9781467307420
T3 - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
SP - 167
EP - 170
BT - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
T2 - 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Y2 - 22 May 2012 through 23 May 2012
ER -