Ru cyclooctatetraene precursors for MOCVD

Tatsuya Ando; Naoki Nakata; Kazuharu Suzuki; Takahiro Matsumoto; Seiji Ogo

doi:10.1039/c1dt11454a

Ru cyclooctatetraene precursors for MOCVD

Tatsuya Ando, Naoki Nakata, Kazuharu Suzuki, Takahiro Matsumoto, Seiji Ogo

Center for Small Molecule Energy

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A series of Ru ⁰ cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials. The compounds are easy to handle and lead to highly conformal thin films of Ru on SiO ₂ features; even within holes with aspect ratios of 40:1. SEM, AFM and XPS studies confirm the near ideal nature of the resulting conformal thin film.

Original language	English
Pages (from-to)	1678-1682
Number of pages	5
Journal	Dalton Transactions
Volume	41
Issue number	6
DOIs	https://doi.org/10.1039/c1dt11454a
Publication status	Published - Feb 14 2012

All Science Journal Classification (ASJC) codes

Inorganic Chemistry

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10.1039/c1dt11454a

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AU - Ando, Tatsuya

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AU - Matsumoto, Takahiro

AU - Ogo, Seiji

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AB - A series of Ru 0 cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials. The compounds are easy to handle and lead to highly conformal thin films of Ru on SiO 2 features; even within holes with aspect ratios of 40:1. SEM, AFM and XPS studies confirm the near ideal nature of the resulting conformal thin film.

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Ru cyclooctatetraene precursors for MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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