Ru cyclooctatetraene precursors for MOCVD

Tatsuya Ando, Naoki Nakata, Kazuharu Suzuki, Takahiro Matsumoto, Seiji Ogo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A series of Ru 0 cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials. The compounds are easy to handle and lead to highly conformal thin films of Ru on SiO 2 features; even within holes with aspect ratios of 40:1. SEM, AFM and XPS studies confirm the near ideal nature of the resulting conformal thin film.

Original languageEnglish
Pages (from-to)1678-1682
Number of pages5
JournalDalton Transactions
Volume41
Issue number6
DOIs
Publication statusPublished - Feb 14 2012

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Organic Chemicals
Chemical vapor deposition
Metals
Thin films
Melting point
Aspect ratio
X ray photoelectron spectroscopy
Decomposition
Scanning electron microscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Inorganic Chemistry

Cite this

Ru cyclooctatetraene precursors for MOCVD. / Ando, Tatsuya; Nakata, Naoki; Suzuki, Kazuharu; Matsumoto, Takahiro; Ogo, Seiji.

In: Dalton Transactions, Vol. 41, No. 6, 14.02.2012, p. 1678-1682.

Research output: Contribution to journalArticle

Ando, Tatsuya ; Nakata, Naoki ; Suzuki, Kazuharu ; Matsumoto, Takahiro ; Ogo, Seiji. / Ru cyclooctatetraene precursors for MOCVD. In: Dalton Transactions. 2012 ; Vol. 41, No. 6. pp. 1678-1682.
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