Scanning electron microscope observation of dislocations in semiconductor and metal materials

Noriyuki Kuwano, Masaru Itakura, Yoshiyuki Nagatomo, Shigeaki Tachibana

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Scanning electron microscope (SEM) image contrasts have been investigated for dislocations in semiconductor and metal materials. It is revealed that single dislocations can be observed in a high contrast in SEM images formed by backscattered electrons (BSE) under the condition of a normal configuration of SEM. The BSE images of dislocations were compared with those of the transmission electron microscope and scanning transmission electron microscope (STEM) and the dependence of BSE image contrast on the tilting of specimen was examined to discuss the origin of image contrast. From the experimental results, it is concluded that the BSE images of single dislocations are attributed to the diffraction effect and related with high-angle dark-field images of STEM.

Original languageEnglish
Pages (from-to)S175-S181
JournalJournal of Electron Microscopy
Volume59
Issue numberSUPPL. 1
DOIs
Publication statusPublished - Aug 2010

All Science Journal Classification (ASJC) codes

  • Instrumentation

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