Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Yung Chang Lin, Hyun Goo Ji, Li Jen Chang, Yao Pang Chang, Zheng Liu, Gun Do Lee, Po Wen Chiu, Hiroki Ago, Kazu Suenaga

Research output: Contribution to journalArticle

Abstract

Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.

Original languageEnglish
Pages (from-to)6034-6042
Number of pages9
JournalACS nano
Volume14
Issue number5
DOIs
Publication statusPublished - May 26 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Lin, Y. C., Ji, H. G., Chang, L. J., Chang, Y. P., Liu, Z., Lee, G. D., Chiu, P. W., Ago, H., & Suenaga, K. (2020). Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials. ACS nano, 14(5), 6034-6042. https://doi.org/10.1021/acsnano.0c01729