Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces

Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, Fumio Komori

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Abstract

An epitaxial silicon-oxide monolayer of chemical composition of Si 2O3 (the Si2O3 layer) formed on hexagonal SiC(0001̄) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si 2O3 layer are found to be missing SiOn (n=1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

Original languageEnglish
Article number051601
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
Publication statusPublished - Jan 1 2014

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silicon dioxide
scanning
scanning tunneling microscopy
silicon oxides
semiconductor devices
metal oxide semiconductors
chemical composition
defects
spectroscopy
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces. / Tochihara, Hiroshi; Shirasawa, Tetsuroh; Suzuki, Takayuki; Miyamachi, Toshio; Kajiwara, Takashi; Yagyu, Kazuma; Yoshizawa, Shunsuke; Takahashi, Toshio; Tanaka, Satoru; Komori, Fumio.

In: Applied Physics Letters, Vol. 104, No. 5, 051601, 01.01.2014.

Research output: Contribution to journalArticle

Tochihara, H, Shirasawa, T, Suzuki, T, Miyamachi, T, Kajiwara, T, Yagyu, K, Yoshizawa, S, Takahashi, T, Tanaka, S & Komori, F 2014, 'Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces', Applied Physics Letters, vol. 104, no. 5, 051601. https://doi.org/10.1063/1.4863753
Tochihara, Hiroshi ; Shirasawa, Tetsuroh ; Suzuki, Takayuki ; Miyamachi, Toshio ; Kajiwara, Takashi ; Yagyu, Kazuma ; Yoshizawa, Shunsuke ; Takahashi, Toshio ; Tanaka, Satoru ; Komori, Fumio. / Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces. In: Applied Physics Letters. 2014 ; Vol. 104, No. 5.
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