Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces

Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, Fumio Komori

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An epitaxial silicon-oxide monolayer of chemical composition of Si 2O3 (the Si2O3 layer) formed on hexagonal SiC(0001̄) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si 2O3 layer are found to be missing SiOn (n=1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

Original languageEnglish
Article number051601
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
Publication statusPublished - Jan 1 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces'. Together they form a unique fingerprint.

  • Cite this

    Tochihara, H., Shirasawa, T., Suzuki, T., Miyamachi, T., Kajiwara, T., Yagyu, K., Yoshizawa, S., Takahashi, T., Tanaka, S., & Komori, F. (2014). Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces. Applied Physics Letters, 104(5), [051601]. https://doi.org/10.1063/1.4863753