Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface

Anton Visikovskiy, Masamichi Yoshimura, Kazuyuki Ueda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.

Original languageEnglish
Article number08LB05
JournalJapanese Journal of Applied Physics
Volume49
Issue number8 PART 4
DOIs
Publication statusPublished - Aug 2010
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
Hydrogenation
hydrogenation
scanning tunneling microscopy
Hydrogen
Surface structure
Annealing
Defects
saturation
annealing
defects
hydrogen
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface. / Visikovskiy, Anton; Yoshimura, Masamichi; Ueda, Kazuyuki.

In: Japanese Journal of Applied Physics, Vol. 49, No. 8 PART 4, 08LB05, 08.2010.

Research output: Contribution to journalArticle

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