Schottky source/drain SOI MOSFET with shallow doped extension

Mika Nishisaka, Sumie Matsumoto, Tanemasa Asano

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) whose source and drain are composed of deep Schottky contact and shallow-doped extension is investigated. This new structure aims at reducing the floating body effect of a partially depleted SOI MOSFET while keeping its current drive at the same level as that of the conventional pn junction SOI MOSFET. The shallow doping was performed by implanting Sb to form n-channel devices. Incorporation of the shallow extensions into the Schottky source and drain SOI MOSFET can increase the current drive by about 2 orders of magnitude owing to the reduction of the effective Schottky barrier. It can also decrease the leakage current owing to the reduced field at the drain Schottky contact. The effect of the new source and drain structure on the floating body effect is investigated by fabricating devices with body contact. The body current in MOSFET operation and tests in lateral bipolar operation show that the proposed source/drain structure is effective in reducing the floating body effect and therefore suppressing the early drain breakdown of the SOI MOSFET.

Original languageEnglish
Pages (from-to)2009-2013
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - Apr 1 2003

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MOSFET devices
metal oxide semiconductors
field effect transistors
insulators
Silicon
silicon
floating
electric contacts
silicon junctions
Leakage currents
Doping (additives)
leakage
breakdown

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Schottky source/drain SOI MOSFET with shallow doped extension. / Nishisaka, Mika; Matsumoto, Sumie; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 01.04.2003, p. 2009-2013.

Research output: Contribution to journalArticle

Nishisaka, Mika ; Matsumoto, Sumie ; Asano, Tanemasa. / Schottky source/drain SOI MOSFET with shallow doped extension. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 4 B. pp. 2009-2013.
@article{80ef30b1466e48d7b3130c26c0bbbf1d,
title = "Schottky source/drain SOI MOSFET with shallow doped extension",
abstract = "Silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) whose source and drain are composed of deep Schottky contact and shallow-doped extension is investigated. This new structure aims at reducing the floating body effect of a partially depleted SOI MOSFET while keeping its current drive at the same level as that of the conventional pn junction SOI MOSFET. The shallow doping was performed by implanting Sb to form n-channel devices. Incorporation of the shallow extensions into the Schottky source and drain SOI MOSFET can increase the current drive by about 2 orders of magnitude owing to the reduction of the effective Schottky barrier. It can also decrease the leakage current owing to the reduced field at the drain Schottky contact. The effect of the new source and drain structure on the floating body effect is investigated by fabricating devices with body contact. The body current in MOSFET operation and tests in lateral bipolar operation show that the proposed source/drain structure is effective in reducing the floating body effect and therefore suppressing the early drain breakdown of the SOI MOSFET.",
author = "Mika Nishisaka and Sumie Matsumoto and Tanemasa Asano",
year = "2003",
month = "4",
day = "1",
language = "English",
volume = "42",
pages = "2009--2013",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "4 B",

}

TY - JOUR

T1 - Schottky source/drain SOI MOSFET with shallow doped extension

AU - Nishisaka, Mika

AU - Matsumoto, Sumie

AU - Asano, Tanemasa

PY - 2003/4/1

Y1 - 2003/4/1

N2 - Silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) whose source and drain are composed of deep Schottky contact and shallow-doped extension is investigated. This new structure aims at reducing the floating body effect of a partially depleted SOI MOSFET while keeping its current drive at the same level as that of the conventional pn junction SOI MOSFET. The shallow doping was performed by implanting Sb to form n-channel devices. Incorporation of the shallow extensions into the Schottky source and drain SOI MOSFET can increase the current drive by about 2 orders of magnitude owing to the reduction of the effective Schottky barrier. It can also decrease the leakage current owing to the reduced field at the drain Schottky contact. The effect of the new source and drain structure on the floating body effect is investigated by fabricating devices with body contact. The body current in MOSFET operation and tests in lateral bipolar operation show that the proposed source/drain structure is effective in reducing the floating body effect and therefore suppressing the early drain breakdown of the SOI MOSFET.

AB - Silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) whose source and drain are composed of deep Schottky contact and shallow-doped extension is investigated. This new structure aims at reducing the floating body effect of a partially depleted SOI MOSFET while keeping its current drive at the same level as that of the conventional pn junction SOI MOSFET. The shallow doping was performed by implanting Sb to form n-channel devices. Incorporation of the shallow extensions into the Schottky source and drain SOI MOSFET can increase the current drive by about 2 orders of magnitude owing to the reduction of the effective Schottky barrier. It can also decrease the leakage current owing to the reduced field at the drain Schottky contact. The effect of the new source and drain structure on the floating body effect is investigated by fabricating devices with body contact. The body current in MOSFET operation and tests in lateral bipolar operation show that the proposed source/drain structure is effective in reducing the floating body effect and therefore suppressing the early drain breakdown of the SOI MOSFET.

UR - http://www.scopus.com/inward/record.url?scp=0037672096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037672096&partnerID=8YFLogxK

M3 - Article

VL - 42

SP - 2009

EP - 2013

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -