絶縁膜上におけるGe(Si)薄膜の溶融成長: Si偏析効果による大粒径化

Translated title of the contribution: Seed-Less Melting Growth of Ge(Si) on Insulator: Large Grain Formation by Si Segregation

加藤 立奨, 黒澤 昌志, 横山 裕之, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticle

Abstract

Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.
Translated title of the contributionSeed-Less Melting Growth of Ge(Si) on Insulator: Large Grain Formation by Si Segregation
Original languageJapanese
Pages (from-to)61-62
Number of pages2
Journal電子情報通信学会技術研究報告. OME, 有機エレクトロニクス
Volume112
Issue number19
Publication statusPublished - Apr 20 2012

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