Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator

Yuki Kai, Hironori Chikita, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.

Original languageEnglish
Pages (from-to)P76-P79
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number2
DOIs
Publication statusPublished - Jan 1 2016

Fingerprint

Growth temperature
Crystalline materials
Seed
Amorphous films
Annealing
Flexible electronics
Diamond
Position control
Crystallization
Diamonds
Plastics
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator. / Kai, Yuki; Chikita, Hironori; Matsumura, Ryo; Sadoh, Taizoh; Miyao, Masanobu.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 2, 01.01.2016, p. P76-P79.

Research output: Contribution to journalArticle

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