TY - JOUR
T1 - Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator
AU - Kai, Yuki
AU - Chikita, Hironori
AU - Matsumura, Ryo
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2016
Y1 - 2016
N2 - Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.
AB - Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84950140081&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950140081&partnerID=8YFLogxK
U2 - 10.1149/2.0241602jss
DO - 10.1149/2.0241602jss
M3 - Article
AN - SCOPUS:84950140081
VL - 5
SP - P76-P79
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 2
ER -