Abstract
Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.
| Original language | English |
|---|---|
| Pages (from-to) | P76-P79 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 1 2016 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator. / Kai, Yuki; Chikita, Hironori; Matsumura, Ryo; Sadoh, Taizoh; Miyao, Masanobu.
In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 2, 01.01.2016, p. P76-P79.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator
AU - Kai, Yuki
AU - Chikita, Hironori
AU - Matsumura, Ryo
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.
AB - Position control of low-temperature solid-phase crystallization in amorphous-GeSn (a-GeSn) films is investigated using a-GeSn films covering Sn/a-Ge stacked islands on insulator. Two-steps annealing has been performed, i.e., first-step annealing (∼250°C) to crystallize Sn/a-Ge islands for crystalline-seed formation and second-step annealing (≤250°C) to proceed lateral-growth from the crystalline-seed. It is found that Sn thickness exceeding ∼70% of Ge thickness is the essential condition to achieve crystalline GeSn islands (grain size >10 nm) with the diamond structure. This acts as crystalline-seed enabling the lateral-growth of a-GeSn over 80 μm. The present process below the softening-temperature (∼300°C) of plastic substrates facilitates realization of advanced flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84950140081&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950140081&partnerID=8YFLogxK
U2 - 10.1149/2.0241602jss
DO - 10.1149/2.0241602jss
M3 - Article
AN - SCOPUS:84950140081
VL - 5
SP - P76-P79
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 2
ER -