Segregation of oxygen at a solid/liquid interface in silicon

Koichi Kakimoto, Hiroyuki Ozoe

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The incorporation of oxygen into silicon single crystals from the melt is examined in terms of an experiment and a model on a transient solidification. A transient analysis offered an effective segregation coefficient of oxygen in silicon and a diffusion constant of oxygen in the melt almost independently. The analysis estimated these values of effective segregation coefficient of oxygen in silicon and diffusion constant of oxygen in the melt.

Original languageEnglish
Pages (from-to)1692-1695
Number of pages4
JournalJournal of the Electrochemical Society
Volume145
Issue number5
DOIs
Publication statusPublished - Jan 1 1998

Fingerprint

Silicon
Oxygen
Liquids
Transient analysis
Solidification
Single crystals
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Segregation of oxygen at a solid/liquid interface in silicon. / Kakimoto, Koichi; Ozoe, Hiroyuki.

In: Journal of the Electrochemical Society, Vol. 145, No. 5, 01.01.1998, p. 1692-1695.

Research output: Contribution to journalArticle

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