Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

Kazutoshi Kato, M. Yuda, A. Kozen, Y. Muramoto, K. Noguchi, O. Nakajima

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.

Original languageEnglish
Pages (from-to)2078-2079
Number of pages2
JournalElectronics Letters
Volume32
Issue number22
DOIs
Publication statusPublished - Oct 24 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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