Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

Kazutoshi Kato, M. Yuda, A. Kozen, Y. Muramoto, K. Noguchi, O. Nakajima

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.

Original languageEnglish
Pages (from-to)2078-2079
Number of pages2
JournalElectronics Letters
Volume32
Issue number22
DOIs
Publication statusPublished - Oct 24 1996
Externally publishedYes

Fingerprint

Planar waveguides
Photodiodes
Waveguides
Electric power utilization
Impurities
Bandwidth
Fabrication
Electric potential
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules. / Kato, Kazutoshi; Yuda, M.; Kozen, A.; Muramoto, Y.; Noguchi, K.; Nakajima, O.

In: Electronics Letters, Vol. 32, No. 22, 24.10.1996, p. 2078-2079.

Research output: Contribution to journalArticle

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