Selective area laser-assisted doping of SiC thin films and blue light electroluminescence

Emmanuel Paneerselvam, Toshifumi Kikuchi, Hiroshi Ikenoue, Nilesh J. Vasa, I. A. Palani, Mitsuhiro Higashihata, Daisuke Nakamura, M. S. Ramachandra Rao

Research output: Contribution to journalArticlepeer-review

Abstract

Laser-assisted doping combined with annealing technique is used in selective areas to form a p-n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p-n junction is realized side-by-side on the post-deposited SiC thin film. I-V characteristics by two probe technique showed the p-n diode characteristics. Blue light (400 nm) electroluminescence from the p-n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I-V reverse characteristics was observed by illuminating the p-n SiC thin film with green/blue light.

Original languageEnglish
Article number48LT01
JournalJournal of Physics D: Applied Physics
Volume52
Issue number48
DOIs
Publication statusPublished - Sep 12 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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