Selective coordination epitaxial growth (SCE) of transition metal coordination compounds, a new growth technique of new materials in the field of electronics, is proposed and demonstrated. A heterostructure of halogen-bridged mixed-valence metal complexes is epitaxially grown successfully for the first time. This method is a powerful technique, which produces various kinds of superlattice of transition metal coordination compounds.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 1986|
All Science Journal Classification (ASJC) codes
- Materials Science(all)