Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds

Hiroshi Tanino, Kazuhiro Takahashi, Takafumi Yao

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Selective coordination epitaxial growth (SCE) of transition metal coordination compounds, a new growth technique of new materials in the field of electronics, is proposed and demonstrated. A heterostructure of halogen-bridged mixed-valence metal complexes is epitaxially grown successfully for the first time. This method is a powerful technique, which produces various kinds of superlattice of transition metal coordination compounds.
Original languageEnglish
Pages (from-to)L571-L573
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume25
Issue number7
Publication statusPublished - 1986

Fingerprint

Epitaxial growth
Transition metals
transition metals
Halogens
Coordination Complexes
Metal complexes
Heterojunctions
Electronic equipment
halogens
valence
electronics
metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Chemistry(all)

Cite this

Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds. / Tanino, Hiroshi; Takahashi, Kazuhiro; Yao, Takafumi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 25, No. 7, 1986, p. L571-L573.

Research output: Contribution to journalArticle

@article{a837873ba6d043a3bf05d35b05c5a290,
title = "Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds",
abstract = "Selective coordination epitaxial growth (SCE) of transition metal coordination compounds, a new growth technique of new materials in the field of electronics, is proposed and demonstrated. A heterostructure of halogen-bridged mixed-valence metal complexes is epitaxially grown successfully for the first time. This method is a powerful technique, which produces various kinds of superlattice of transition metal coordination compounds.",
author = "Hiroshi Tanino and Kazuhiro Takahashi and Takafumi Yao",
year = "1986",
language = "English",
volume = "25",
pages = "L571--L573",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "7",

}

TY - JOUR

T1 - Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds

AU - Tanino, Hiroshi

AU - Takahashi, Kazuhiro

AU - Yao, Takafumi

PY - 1986

Y1 - 1986

N2 - Selective coordination epitaxial growth (SCE) of transition metal coordination compounds, a new growth technique of new materials in the field of electronics, is proposed and demonstrated. A heterostructure of halogen-bridged mixed-valence metal complexes is epitaxially grown successfully for the first time. This method is a powerful technique, which produces various kinds of superlattice of transition metal coordination compounds.

AB - Selective coordination epitaxial growth (SCE) of transition metal coordination compounds, a new growth technique of new materials in the field of electronics, is proposed and demonstrated. A heterostructure of halogen-bridged mixed-valence metal complexes is epitaxially grown successfully for the first time. This method is a powerful technique, which produces various kinds of superlattice of transition metal coordination compounds.

M3 - Article

VL - 25

SP - L571-L573

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7

ER -