Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman spectroscopy

Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

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10 Citations (Scopus)

Abstract

Nondestructive evaluation of uni- and biaxial strain-distributions in Si-on-insulator (SOI) structures is essential to accelerate research and development of next-generation-strained-Si-transistors. We investigate polarized Raman scattering from (001) SOI-microstructures with SiN-stress-liners. Raman intensities are analyzed as a function of the angle between [100]-axis and polarization-directions of scattered-light. Interestingly, inactive Raman peaks in strain-free Si for scattered-light polarized along [100] and [010] directions become active in strained-Si, which is quantitatively explained by crystal-symmetry-change from cubic to orthorhombic or tetragonal structures. These findings enable precise evaluation of strain-distributions. Based on these results, selective-mapping of uni- and biaxial-strains in SOI-microstructures is demonstrated.

Original languageEnglish
Article number012110
JournalApplied Physics Letters
Volume98
Issue number1
DOIs
Publication statusPublished - Jan 3 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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