Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

Xiaoling Shi, Guofa Dong, Ming Fang, Fengyun Wang, Hao Lin, Wen Chun Yen, Kwok Sum Chan, Yu Lun Chueh, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

Abstract

Selective and reliable n-type doping as well as tuning the Dirac point of graphene are important for the realization of high-performance complementary circuits. In this work, we present a simple but effective technique to left shift the Dirac point of graphene transistors to induce n-type doping via thermal decoration of Al nanoparticles. The decorated discrete nanoparticles are uniformly distributed on the top of the graphene channel surface with consistent size and shape. Detailed electrical measurements reveal that the decoration can efficiently shift the Dirac point of graphene towards negative gate voltages along with the improved on/off current ratio and excellent air-stability. All these further indicate the technological potency of this doping technique for the fabrication of future CMOS graphene electronics. This journal is

Original languageEnglish
Pages (from-to)5417-5421
Number of pages5
JournalJournal of Materials Chemistry C
Volume2
Issue number27
DOIs
Publication statusPublished - Jul 21 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Selective n-type doping in graphene via the aluminium nanoparticle decoration approach'. Together they form a unique fingerprint.

Cite this