Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process

S. Yukutake, T. Kawazoe, T. Yatsui, Wataru Nomura, K. Kitamura, M. Ohtsu

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the ptype and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0 = 660 nm) while reversely biasing the P3HT/ZnO pnjunction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (= 570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.

Original languageEnglish
Pages (from-to)415-422
Number of pages8
JournalApplied Physics B: Lasers and Optics
Volume99
Issue number3
DOIs
Publication statusPublished - May 1 2010

Fingerprint

photocurrents
near fields
wavelengths
materials tests
n-type semiconductors
Stark effect
cut-off
sputtering
direct current
illumination
electrodes
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process. / Yukutake, S.; Kawazoe, T.; Yatsui, T.; Nomura, Wataru; Kitamura, K.; Ohtsu, M.

In: Applied Physics B: Lasers and Optics, Vol. 99, No. 3, 01.05.2010, p. 415-422.

Research output: Contribution to journalArticle

@article{8ba0be8bb78d4c5ca6f856000d3a6853,
title = "Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process",
abstract = "In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the ptype and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0 = 660 nm) while reversely biasing the P3HT/ZnO pnjunction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (= 570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.",
author = "S. Yukutake and T. Kawazoe and T. Yatsui and Wataru Nomura and K. Kitamura and M. Ohtsu",
year = "2010",
month = "5",
day = "1",
doi = "10.1007/s00340-010-3999-5",
language = "English",
volume = "99",
pages = "415--422",
journal = "Applied Physics B: Lasers and Optics",
issn = "0946-2171",
publisher = "Springer Verlag",
number = "3",

}

TY - JOUR

T1 - Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process

AU - Yukutake, S.

AU - Kawazoe, T.

AU - Yatsui, T.

AU - Nomura, Wataru

AU - Kitamura, K.

AU - Ohtsu, M.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the ptype and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0 = 660 nm) while reversely biasing the P3HT/ZnO pnjunction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (= 570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.

AB - In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the ptype and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0 = 660 nm) while reversely biasing the P3HT/ZnO pnjunction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (= 570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.

UR - http://www.scopus.com/inward/record.url?scp=77955927356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955927356&partnerID=8YFLogxK

U2 - 10.1007/s00340-010-3999-5

DO - 10.1007/s00340-010-3999-5

M3 - Article

VL - 99

SP - 415

EP - 422

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

SN - 0946-2171

IS - 3

ER -