Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

K. Matsuyama; N. Murashima; M. Higashidani; Y. Nozaki

doi:10.1109/20.908584

Selective writing of sub-μm² domain in spin valve strip with current coincident scheme

K. Matsuyama, N. Murashima, M. Higashidani, Y. Nozaki

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

Abstract

Cooperative nucleation of sub-μm² domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current I_w markedly increases with the additional assist current I_a. Threshold value of I_w required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of I_a with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between I_w and I_a becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm² region.

Original language	English
Pages (from-to)	2767-2769
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	36
Issue number	5 I
DOIs	https://doi.org/10.1109/20.908584
Publication status	Published - Sept 2000
Event	2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada Duration: Apr 9 2000 → Apr 12 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/20.908584

Cite this

@article{bb85cbb0cc3f411abe339f11bf49dc07,

title = "Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme",

abstract = "Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.",

author = "K. Matsuyama and N. Murashima and M. Higashidani and Y. Nozaki",

year = "2000",

month = sep,

doi = "10.1109/20.908584",

language = "English",

volume = "36",

pages = "2767--2769",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 I",

note = "2000 International Magnetics Conference (INTERMAG 2000) ; Conference date: 09-04-2000 Through 12-04-2000",

}

TY - JOUR

T1 - Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

AU - Matsuyama, K.

AU - Murashima, N.

AU - Higashidani, M.

AU - Nozaki, Y.

PY - 2000/9

Y1 - 2000/9

N2 - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

AB - Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

UR - http://www.scopus.com/inward/record.url?scp=0034260509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034260509&partnerID=8YFLogxK

U2 - 10.1109/20.908584

DO - 10.1109/20.908584

M3 - Conference article

AN - SCOPUS:0034260509

SN - 0018-9464

VL - 36

SP - 2767

EP - 2769

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 I

T2 - 2000 International Magnetics Conference (INTERMAG 2000)

Y2 - 9 April 2000 through 12 April 2000

ER -

Selective writing of sub-μm² domain in spin valve strip with current coincident scheme

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this