Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors

Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Henry Pigot, Yuichi Harada, Shiro Saito, Akira Fujiwara, Tetsuomi Sogawa, Koji Muraki

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Field-effect transistors (FETs) are fabricated using an optimized gate-all-around gate-overlap structure and an InAs/InP core-shell nanowire (NW) channel. A short-channel device with the gate length of 100nm exhibits superb on-state properties. Subthreshold swing of 85mV/decade is realized in a long-channel device, suggesting an advantage of the core-shell NW channel. Post-annealing is found to improve the subthreshold properties, which is partly ascribed to the formation of InAlAs alloy at the interface between the InAs core and Al source/drain electrodes.

    Original languageEnglish
    Article number04DN04
    JournalJapanese Journal of Applied Physics
    Volume54
    Issue number4
    DOIs
    Publication statusPublished - Apr 1 2015

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    Field effect transistors
    Nanowires
    nanowires
    field effect transistors
    Annealing
    Electrodes
    annealing
    electrodes

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors. / Sasaki, Satoshi; Tateno, Kouta; Zhang, Guoqiang; Pigot, Henry; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji.

    In: Japanese Journal of Applied Physics, Vol. 54, No. 4, 04DN04, 01.04.2015.

    Research output: Contribution to journalArticle

    Sasaki, S, Tateno, K, Zhang, G, Pigot, H, Harada, Y, Saito, S, Fujiwara, A, Sogawa, T & Muraki, K 2015, 'Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors', Japanese Journal of Applied Physics, vol. 54, no. 4, 04DN04. https://doi.org/10.7567/JJAP.54.04DN04
    Sasaki, Satoshi ; Tateno, Kouta ; Zhang, Guoqiang ; Pigot, Henry ; Harada, Yuichi ; Saito, Shiro ; Fujiwara, Akira ; Sogawa, Tetsuomi ; Muraki, Koji. / Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 4.
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    AU - Harada, Yuichi

    AU - Saito, Shiro

    AU - Fujiwara, Akira

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