Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors

Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Henry Pigot, Yuichi Harada, Shiro Saito, Akira Fujiwara, Tetsuomi Sogawa, Koji Muraki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Field-effect transistors (FETs) are fabricated using an optimized gate-all-around gate-overlap structure and an InAs/InP core-shell nanowire (NW) channel. A short-channel device with the gate length of 100nm exhibits superb on-state properties. Subthreshold swing of 85mV/decade is realized in a long-channel device, suggesting an advantage of the core-shell NW channel. Post-annealing is found to improve the subthreshold properties, which is partly ascribed to the formation of InAlAs alloy at the interface between the InAs core and Al source/drain electrodes.

Original languageEnglish
Article number04DN04
JournalJapanese Journal of Applied Physics
Volume54
Issue number4
DOIs
Publication statusPublished - Jan 1 2015
Externally publishedYes

Fingerprint

Field effect transistors
Nanowires
nanowires
field effect transistors
Annealing
Electrodes
annealing
electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors. / Sasaki, Satoshi; Tateno, Kouta; Zhang, Guoqiang; Pigot, Henry; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji.

In: Japanese Journal of Applied Physics, Vol. 54, No. 4, 04DN04, 01.01.2015.

Research output: Contribution to journalArticle

Sasaki, S, Tateno, K, Zhang, G, Pigot, H, Harada, Y, Saito, S, Fujiwara, A, Sogawa, T & Muraki, K 2015, 'Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors' Japanese Journal of Applied Physics, vol. 54, no. 4, 04DN04. https://doi.org/10.7567/JJAP.54.04DN04
Sasaki, Satoshi ; Tateno, Kouta ; Zhang, Guoqiang ; Pigot, Henry ; Harada, Yuichi ; Saito, Shiro ; Fujiwara, Akira ; Sogawa, Tetsuomi ; Muraki, Koji. / Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 4.
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