Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering