Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere

R. Kanno, T. Wada, Y. Yamazaki, J. Wang, M. Isshiki, Y. Iijima

Research output: Contribution to journalArticle

Abstract

Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - Oct 1 2003
Externally publishedYes

Fingerprint

Tellurium
Cadmium telluride
cadmium tellurides
tellurium
Cadmium
cadmium
atmospheres
tracers
Radioactive Tracers
purity
diffusion coefficient
Radioactive tracers
ion beams
impurities
temperature dependence
Ion beams
defects
cadmium telluride
Impurities
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere. / Kanno, R.; Wada, T.; Yamazaki, Y.; Wang, J.; Isshiki, M.; Iijima, Y.

In: Materials Science in Semiconductor Processing, Vol. 6, No. 5-6, 01.10.2003, p. 319-322.

Research output: Contribution to journalArticle

Kanno, R. ; Wada, T. ; Yamazaki, Y. ; Wang, J. ; Isshiki, M. ; Iijima, Y. / Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere. In: Materials Science in Semiconductor Processing. 2003 ; Vol. 6, No. 5-6. pp. 319-322.
@article{331aa4defcc9474b9202818a4ba6b266,
title = "Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere",
abstract = "Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.",
author = "R. Kanno and T. Wada and Y. Yamazaki and J. Wang and M. Isshiki and Y. Iijima",
year = "2003",
month = "10",
day = "1",
doi = "10.1016/j.mssp.2003.07.020",
language = "English",
volume = "6",
pages = "319--322",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "5-6",

}

TY - JOUR

T1 - Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere

AU - Kanno, R.

AU - Wada, T.

AU - Yamazaki, Y.

AU - Wang, J.

AU - Isshiki, M.

AU - Iijima, Y.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.

AB - Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.

UR - http://www.scopus.com/inward/record.url?scp=1642587281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642587281&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.07.020

DO - 10.1016/j.mssp.2003.07.020

M3 - Article

AN - SCOPUS:1642587281

VL - 6

SP - 319

EP - 322

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5-6

ER -