Self-heating issue of poly-Si TFT on glass substrate

Tanemasa Asano, Gou Nakagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of critical issues of TFT for large scale integration is temperature rise of TFT due to self-heating. In this paper, we report temperature rise of poly-Si TFT during operation. The temperature was evaluated by determining the thermal resistance from the temperature-dependent negative-drain conductance. TFTs are fabricated using a laterally-grown poly-Si film. By aligning TFT channel direction with the grain growth direction, effects of grain boundary on carrier transport becomes less significant so that direct evaluation of self-heating from drain characteristic becomes possible. SOI MOSFET is also investigated. Results indicate that the thermal resistance of TFT is 40 times as large as that of SOI MOSFET. As a consequence, temperature rise of TFT reaches to 150 K even under normal operation condition. Heat dissipation path is also investigated by determining the thermal resistance of TFTs having various dimensions. Effect of stripe channel on TFT performance and temperature rise is also discussed. Results clearly indicate that design of thermal path through the gate becomes of importance for TFTs.

Original languageEnglish
Title of host publication2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
Pages15-22
Number of pages8
Edition1
DOIs
Publication statusPublished - Dec 1 2011
Event3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III - Hong Kong, China
Duration: Jun 27 2011Jul 1 2011

Publication series

NameECS Transactions
Number1
Volume37
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III
CountryChina
CityHong Kong
Period6/27/117/1/11

Fingerprint

Polysilicon
Heating
Glass
Substrates
Heat resistance
Temperature
LSI circuits
Carrier transport
Heat losses
Grain growth
Grain boundaries

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Asano, T., & Nakagawa, G. (2011). Self-heating issue of poly-Si TFT on glass substrate. In 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT (1 ed., pp. 15-22). (ECS Transactions; Vol. 37, No. 1). https://doi.org/10.1149/1.3600719

Self-heating issue of poly-Si TFT on glass substrate. / Asano, Tanemasa; Nakagawa, Gou.

2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1. ed. 2011. p. 15-22 (ECS Transactions; Vol. 37, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asano, T & Nakagawa, G 2011, Self-heating issue of poly-Si TFT on glass substrate. in 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1 edn, ECS Transactions, no. 1, vol. 37, pp. 15-22, 3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III, Hong Kong, China, 6/27/11. https://doi.org/10.1149/1.3600719
Asano T, Nakagawa G. Self-heating issue of poly-Si TFT on glass substrate. In 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1 ed. 2011. p. 15-22. (ECS Transactions; 1). https://doi.org/10.1149/1.3600719
Asano, Tanemasa ; Nakagawa, Gou. / Self-heating issue of poly-Si TFT on glass substrate. 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1. ed. 2011. pp. 15-22 (ECS Transactions; 1).
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