Self-ordering of nanofacets on vicinal sic surfaces

Hiroshi Nakagawa, Satoru Tanaka, Ikuo Suemune

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Vicinal [Formula presented] and [Formula presented] surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic self-ordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index [Formula presented] that are induced by equilibrium surface phase separation. A [Formula presented] plane may have a free energy minimum due to attractive step-step interactions. The differing ordering distances in [Formula presented] and [Formula presented] polytypes imply the existence of SiC polytypic dependence on nanofaceting. Thus, it should be possible to control SiC surface nanostructures by selecting a polytype, a vicinal angle, and an etching temperature.

Original languageEnglish
JournalPhysical Review Letters
Volume91
Issue number22
DOIs
Publication statusPublished - Jan 1 2003

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etching
control surfaces
flat surfaces
free energy
atomic force microscopy
transmission electron microscopy
high resolution
gases
interactions
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Self-ordering of nanofacets on vicinal sic surfaces. / Nakagawa, Hiroshi; Tanaka, Satoru; Suemune, Ikuo.

In: Physical Review Letters, Vol. 91, No. 22, 01.01.2003.

Research output: Contribution to journalArticle

Nakagawa, Hiroshi ; Tanaka, Satoru ; Suemune, Ikuo. / Self-ordering of nanofacets on vicinal sic surfaces. In: Physical Review Letters. 2003 ; Vol. 91, No. 22.
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