Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn

Ryo Matsumura, Yuki Kinoshita, Yuki Tojo, Taizoh Sadoh, Tomoaki Nishimura, Masanobu Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature annealing (450-700°C) of a-Ge/Sn/c-Ge stacked-structures is examined to achieve high-quality GeSn singlecrystals on Ge substrates. Abnormal phenomena, where a GeSn-layer travels toward the surface during annealing, were found. In-depth analyses of Sn distribution together with epitaxial-growth clarify the mechanisms, i.e., diffusion of Ge atoms from a-Ge into molten-Sn, and subsequent release of GeSn atoms into c-Ge substrates cause the traveling-zone-melting-growth in self-organizingmanner. Transmission- electron-microscopy observation reveals the defect-free GeSn layers on Ge substrates. High thermal-stability of non-equilibrium Sn concentration in GeSn is guaranteed by post-annealing (~600°C) experiments. This method provides the unique tool to achieve multi-functional-devices based on GeSn-related hetero-structures.

Original languageEnglish
Pages (from-to)P340-P343
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number10
DOIs
Publication statusPublished - 2014

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Zone melting
Annealing
Substrates
Atoms
Epitaxial growth
Molten materials
Thermodynamic stability
Transmission electron microscopy
Defects
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn. / Matsumura, Ryo; Kinoshita, Yuki; Tojo, Yuki; Sadoh, Taizoh; Nishimura, Tomoaki; Miyao, Masanobu.

In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 10, 2014, p. P340-P343.

Research output: Contribution to journalArticle

Matsumura, Ryo ; Kinoshita, Yuki ; Tojo, Yuki ; Sadoh, Taizoh ; Nishimura, Tomoaki ; Miyao, Masanobu. / Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn. In: ECS Journal of Solid State Science and Technology. 2014 ; Vol. 3, No. 10. pp. P340-P343.
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