SEM, AFM and TEM studies for repeated irradiation effect of femtosecond laser on 4H-SiC surface morphology at near threshold fluence

Chengwu Wang, Syuhei Kurokawa, Toshiro Doi, Julong Yuan, Li Fan, Masatoshi Mitsuhara, Huizong Lu, Weifeng Yao, Yu Zhang, Kehua Zhang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In order to investigate the interaction of femtosecond (fs) laser and hard-to-process semiconductor material 4H-SiC at near-threshold fluence, fs laser was repeatedly irradiated to SiC surface at different scanning velocities and scan times. The evolutions of surface morphologies were observed and discussed according to Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and Transmission Electron Microscope (TEM). Discontinuous zones were ablated in SiC surface after laser irradiation at near-threshold fluence 1.1 J/cm2. High spatial frequency rippled structures substantially shorter than the wavelength of incident fs laser were fabricated. The width of the ablated zones increased with lower scanning velocities and more scan times. The mechanism was discussed. Incubation effect occurred in the subsurface of SiC triggered inhomogeneous energy deposition accumulation, which was responsible for the discontinuous ablated zones. Moreover, an amorphous layer with a thickness of about 30 nm was observed in 4H-SiC surface where no ablation was induced after repeated irradiation. This was discussed and explained from the aspects of molecular dynamics simulations of fs laser irradiation to semiconductor materials.

Original languageEnglish
Pages (from-to)P29-P34
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number2
DOIs
Publication statusPublished - Jan 1 2018

Fingerprint

Ultrashort pulses
Surface morphology
Microscopes
Electron microscopes
Irradiation
Scanning
Laser beam effects
Semiconductor materials
Ablation
Molecular dynamics
Wavelength
Computer simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

SEM, AFM and TEM studies for repeated irradiation effect of femtosecond laser on 4H-SiC surface morphology at near threshold fluence. / Wang, Chengwu; Kurokawa, Syuhei; Doi, Toshiro; Yuan, Julong; Fan, Li; Mitsuhara, Masatoshi; Lu, Huizong; Yao, Weifeng; Zhang, Yu; Zhang, Kehua.

In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 2, 01.01.2018, p. P29-P34.

Research output: Contribution to journalArticle

Wang, Chengwu ; Kurokawa, Syuhei ; Doi, Toshiro ; Yuan, Julong ; Fan, Li ; Mitsuhara, Masatoshi ; Lu, Huizong ; Yao, Weifeng ; Zhang, Yu ; Zhang, Kehua. / SEM, AFM and TEM studies for repeated irradiation effect of femtosecond laser on 4H-SiC surface morphology at near threshold fluence. In: ECS Journal of Solid State Science and Technology. 2018 ; Vol. 7, No. 2. pp. P29-P34.
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AU - Wang, Chengwu

AU - Kurokawa, Syuhei

AU - Doi, Toshiro

AU - Yuan, Julong

AU - Fan, Li

AU - Mitsuhara, Masatoshi

AU - Lu, Huizong

AU - Yao, Weifeng

AU - Zhang, Yu

AU - Zhang, Kehua

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