Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

T. Yoshitake, M. Yatabe, M. Itakura, N. Kuwano, Y. Tomokiyo, K. Nagayama

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

A study was performed on the preparation of semiconducting nanocrystalline iron disilicide thin films. The films were grown by pulsed-laser deposition using an FeSi2 target. It was found that they consist of crystallites with diameters ranging from 3 to 5 nm.

Original languageEnglish
Pages (from-to)3057-3059
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number15
DOIs
Publication statusPublished - Oct 13 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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