Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

T. Yoshitake; M. Yatabe; M. Itakura; N. Kuwano; Y. Tomokiyo; K. Nagayama

doi:10.1063/1.1617374

Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

T. Yoshitake, M. Yatabe, M. Itakura, N. Kuwano, Y. Tomokiyo, K. Nagayama

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

A study was performed on the preparation of semiconducting nanocrystalline iron disilicide thin films. The films were grown by pulsed-laser deposition using an FeSi₂ target. It was found that they consist of crystallites with diameters ranging from 3 to 5 nm.

Original language	English
Pages (from-to)	3057-3059
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1617374
Publication status	Published - Oct 13 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1617374

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title = "Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation",

abstract = "A study was performed on the preparation of semiconducting nanocrystalline iron disilicide thin films. The films were grown by pulsed-laser deposition using an FeSi2 target. It was found that they consist of crystallites with diameters ranging from 3 to 5 nm.",

author = "T. Yoshitake and M. Yatabe and M. Itakura and N. Kuwano and Y. Tomokiyo and K. Nagayama",

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AU - Yoshitake, T.

AU - Yatabe, M.

AU - Itakura, M.

AU - Kuwano, N.

AU - Tomokiyo, Y.

AU - Nagayama, K.

PY - 2003/10/13

Y1 - 2003/10/13

N2 - A study was performed on the preparation of semiconducting nanocrystalline iron disilicide thin films. The films were grown by pulsed-laser deposition using an FeSi2 target. It was found that they consist of crystallites with diameters ranging from 3 to 5 nm.

AB - A study was performed on the preparation of semiconducting nanocrystalline iron disilicide thin films. The films were grown by pulsed-laser deposition using an FeSi2 target. It was found that they consist of crystallites with diameters ranging from 3 to 5 nm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

Abstract

All Science Journal Classification (ASJC) codes

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