Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages230-233
Number of pages4
DOIs
Publication statusPublished - Oct 2 2009
Externally publishedYes
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: May 10 2009May 14 2009

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period5/10/095/14/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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