Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates

Yoshifumi Ikoma, Hafizal Yahaya, Keiji Kuriyama, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ∼10 nm were grown by pulse jet CVD of CH3SiH 3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (∼nm) pore formation.

Original languageEnglish
Article number062001
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number6
DOIs
Publication statusPublished - Nov 2011

Fingerprint

Nanopores
SOI (semiconductors)
Chemical vapor deposition
vapor deposition
Semiconductor materials
membranes
Membranes
Substrates
porosity
Pore size
flat surfaces
Anisotropic etching
Surface diffusion
Silicon
surface diffusion
Oxides
Gases
insulators
etching
Atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates. / Ikoma, Yoshifumi; Yahaya, Hafizal; Kuriyama, Keiji; Sakita, Hirofumi; Nishino, Yuta; Motooka, Teruaki.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 6, 062001, 11.2011.

Research output: Contribution to journalArticle

@article{0bb0c5387e6b4c02889fe060d53ed01f,
title = "Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates",
abstract = "The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ∼10 nm were grown by pulse jet CVD of CH3SiH 3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (∼nm) pore formation.",
author = "Yoshifumi Ikoma and Hafizal Yahaya and Keiji Kuriyama and Hirofumi Sakita and Yuta Nishino and Teruaki Motooka",
year = "2011",
month = "11",
doi = "10.1116/1.3646471",
language = "English",
volume = "29",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates

AU - Ikoma, Yoshifumi

AU - Yahaya, Hafizal

AU - Kuriyama, Keiji

AU - Sakita, Hirofumi

AU - Nishino, Yuta

AU - Motooka, Teruaki

PY - 2011/11

Y1 - 2011/11

N2 - The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ∼10 nm were grown by pulse jet CVD of CH3SiH 3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (∼nm) pore formation.

AB - The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ∼10 nm were grown by pulse jet CVD of CH3SiH 3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (∼nm) pore formation.

UR - http://www.scopus.com/inward/record.url?scp=84255168880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84255168880&partnerID=8YFLogxK

U2 - 10.1116/1.3646471

DO - 10.1116/1.3646471

M3 - Article

AN - SCOPUS:84255168880

VL - 29

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

M1 - 062001

ER -