Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates

Yoshifumi Ikoma, Hafizal Yahaya, Keiji Kuriyama, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

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    6 Citations (Scopus)

    Abstract

    The authors investigated the formation of nanometer-scale pore (nanopore) arrays by chemical vapor deposition (CVD) of heteroepitaxial SiC films on Si(100) membranes prepared by anisotropic etching of silicon on insulator substrates from the back-side surfaces. SiC heteroepitaxial films with thicknesses of ∼10 nm were grown by pulse jet CVD of CH3SiH 3 gas. During the SiC growth, inverted pyramidal pits with {111} facets grew into the Si membranes due to the surface diffusion of Si atoms outward from the bulk Si. Nanopores were formed at the tips of the inverted pyramidal pits. The pore sizes were found to be dependent on the existence of the buried oxide layers under the Si membranes. It is suggested that maintaining the {111} facets during the SiC growth on the Si membrane is essential for smaller size (∼nm) pore formation.

    Original languageEnglish
    Article number062001
    JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
    Volume29
    Issue number6
    DOIs
    Publication statusPublished - Nov 2011

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Materials Chemistry

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