Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Norio Miura; Tatsuro Harada; Nobuaki Yoshida; Youichi Shimizu; Noboru Yamazoe

doi:10.1016/0925-4005(95)85107-0

Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Norio Miura, Tatsuro Harada, Nobuaki Yoshida, Youichi Shimizu, Noboru Yamazoe

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An FET-based microsensor using a proton conductor for detecting a small concentration of H₂ in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (I_D) at 30°C, the output voltage (V_GS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H₂ concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H₂ sensor previously reported. The 90% response time to 5000 ppm H₂ is as short as ≈ 5 s. The H₂-sensing mechanism of the present microsensor is briefly discussed.

Original language	English
Pages (from-to)	499-503
Number of pages	5
Journal	Sensors and Actuators: B. Chemical
Volume	25
Issue number	1-3
DOIs	https://doi.org/10.1016/0925-4005(95)85107-0
Publication status	Published - Apr 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film",

abstract = "An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.",

author = "Norio Miura and Tatsuro Harada and Nobuaki Yoshida and Youichi Shimizu and Noboru Yamazoe",

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T1 - Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

AU - Miura, Norio

AU - Harada, Tatsuro

AU - Yoshida, Nobuaki

AU - Shimizu, Youichi

AU - Yamazoe, Noboru

PY - 1995/4

Y1 - 1995/4

N2 - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.

AB - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.

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Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Abstract

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