Abstract
An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 499-503 |
| Number of pages | 5 |
| Journal | Sensors and Actuators: B. Chemical |
| Volume | 25 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - Jan 1 1995 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film. / Miura, Norio; Harada, Tatsuro; Yoshida, Nobuaki; Shimizu, Youichi; Yamazoe, Noboru.
In: Sensors and Actuators: B. Chemical, Vol. 25, No. 1-3, 01.01.1995, p. 499-503.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film
AU - Miura, Norio
AU - Harada, Tatsuro
AU - Yoshida, Nobuaki
AU - Shimizu, Youichi
AU - Yamazoe, Noboru
PY - 1995/1/1
Y1 - 1995/1/1
N2 - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.
AB - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.
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UR - http://www.scopus.com/inward/citedby.url?scp=0029292953&partnerID=8YFLogxK
U2 - 10.1016/0925-4005(95)85107-0
DO - 10.1016/0925-4005(95)85107-0
M3 - Article
AN - SCOPUS:0029292953
VL - 25
SP - 499
EP - 503
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 1-3
ER -