Sensitive detection of nitrogen oxides based upon capacitance changes in binary oxide mixture

Tatsumi Ishihara; Shinobu Sato; Yusaku Takita

doi:10.1016/0925-4005(95)01744-G

Sensitive detection of nitrogen oxides based upon capacitance changes in binary oxide mixture

Tatsumi Ishihara, Shinobu Sato, Yusaku Takita

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The capacitance of mixed oxides consisting of oxides with different semiconducting properties decreases upon exposure to NO. In particular, the mixed oxide NiO-WO₃ exhibits an extremely large capacitance decrease upon exposure to 100 ppm NO, but a period longer than 30 min is required to recover the original capacitance level after changing to air without NO. On the other hand, the mixed oxide WO₃-ZnO exhibits a large capacitance decrease upon exposure to NO and its capacitance decreases with increases in the NO concentration up to 300 ppm. Therefore, the concentration of nitrogen oxide can be analysed by the capacitance of these mixed oxides.

Original language	English
Pages (from-to)	43-45
Number of pages	3
Journal	Sensors and Actuators, B: Chemical
Volume	30
Issue number	1
DOIs	https://doi.org/10.1016/0925-4005(95)01744-G
Publication status	Published - Jan 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0925-4005(95)01744-G

Cite this

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title = "Sensitive detection of nitrogen oxides based upon capacitance changes in binary oxide mixture",

abstract = "The capacitance of mixed oxides consisting of oxides with different semiconducting properties decreases upon exposure to NO. In particular, the mixed oxide NiO-WO3 exhibits an extremely large capacitance decrease upon exposure to 100 ppm NO, but a period longer than 30 min is required to recover the original capacitance level after changing to air without NO. On the other hand, the mixed oxide WO3-ZnO exhibits a large capacitance decrease upon exposure to NO and its capacitance decreases with increases in the NO concentration up to 300 ppm. Therefore, the concentration of nitrogen oxide can be analysed by the capacitance of these mixed oxides.",

author = "Tatsumi Ishihara and Shinobu Sato and Yusaku Takita",

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AU - Ishihara, Tatsumi

AU - Sato, Shinobu

AU - Takita, Yusaku

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Y1 - 1996/1/1

N2 - The capacitance of mixed oxides consisting of oxides with different semiconducting properties decreases upon exposure to NO. In particular, the mixed oxide NiO-WO3 exhibits an extremely large capacitance decrease upon exposure to 100 ppm NO, but a period longer than 30 min is required to recover the original capacitance level after changing to air without NO. On the other hand, the mixed oxide WO3-ZnO exhibits a large capacitance decrease upon exposure to NO and its capacitance decreases with increases in the NO concentration up to 300 ppm. Therefore, the concentration of nitrogen oxide can be analysed by the capacitance of these mixed oxides.

AB - The capacitance of mixed oxides consisting of oxides with different semiconducting properties decreases upon exposure to NO. In particular, the mixed oxide NiO-WO3 exhibits an extremely large capacitance decrease upon exposure to 100 ppm NO, but a period longer than 30 min is required to recover the original capacitance level after changing to air without NO. On the other hand, the mixed oxide WO3-ZnO exhibits a large capacitance decrease upon exposure to NO and its capacitance decreases with increases in the NO concentration up to 300 ppm. Therefore, the concentration of nitrogen oxide can be analysed by the capacitance of these mixed oxides.

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Sensitive detection of nitrogen oxides based upon capacitance changes in binary oxide mixture

Abstract

All Science Journal Classification (ASJC) codes

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