Sensitivity analysis of scanning microwave microscopy for nano-scale dopant measurements in Si

Kazuhisa Torigoe, Makoto Arita, Teruaki Motooka

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We analyzed the sensitivity of scanning microwave microscopy (SMM) for doping concentration measurements in n-type Si based on the conventional equivalent-circuit model combined with numerical simulations of carrier distributions in metal-oxide-semiconductor capacitors. The minimum detectable change in capacitance was estimated to be 0.26 aF for the amplitude of the applied 17 GHz microwave voltage of 0.3 V. Possible measurable range of electron concentrations in Si was found to be 1015-1020 cm -3 with ∼10-1 accuracy by using nano-scale flat-shaped tips for SMM measurements.

Original languageEnglish
Article number104325
JournalJournal of Applied Physics
Volume112
Issue number10
DOIs
Publication statusPublished - Nov 15 2012

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sensitivity analysis
microscopy
microwaves
scanning
equivalent circuits
metal oxide semiconductors
capacitors
capacitance
electric potential
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Sensitivity analysis of scanning microwave microscopy for nano-scale dopant measurements in Si. / Torigoe, Kazuhisa; Arita, Makoto; Motooka, Teruaki.

In: Journal of Applied Physics, Vol. 112, No. 10, 104325, 15.11.2012.

Research output: Contribution to journalArticle

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