Sensitivity analysis of scanning microwave microscopy for nano-scale dopant measurements in Si

Kazuhisa Torigoe, Makoto Arita, Teruaki Motooka

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    13 Citations (Scopus)

    Abstract

    We analyzed the sensitivity of scanning microwave microscopy (SMM) for doping concentration measurements in n-type Si based on the conventional equivalent-circuit model combined with numerical simulations of carrier distributions in metal-oxide-semiconductor capacitors. The minimum detectable change in capacitance was estimated to be 0.26 aF for the amplitude of the applied 17 GHz microwave voltage of 0.3 V. Possible measurable range of electron concentrations in Si was found to be 1015-1020 cm -3 with ∼10-1 accuracy by using nano-scale flat-shaped tips for SMM measurements.

    Original languageEnglish
    Article number104325
    JournalJournal of Applied Physics
    Volume112
    Issue number10
    DOIs
    Publication statusPublished - Nov 15 2012

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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