Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C 2H4O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La2O3(0.5 wt.%), Sb(0.05 at.%)-SnO 2 gave sensor response (Rair/Rgas) exceeding 4 to 1 ppm C2H4O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO2, the electrical resistance of the former device was still at 106 Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.
|Number of pages||6|
|Publication status||Published - 2004|
|Event||Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium - Honolulu, HI, United States|
Duration: Oct 3 2004 → Oct 8 2004
|Other||Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium|
|Period||10/3/04 → 10/8/04|
All Science Journal Classification (ASJC) codes