Sensitization of SnO2-based thick film sensor for ethylene oxide gas

M. Kugishima, K. Shimanoe, N. Yamazoe

Research output: Contribution to conferencePaper

Abstract

Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C 2H4O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La2O3(0.5 wt.%), Sb(0.05 at.%)-SnO 2 gave sensor response (Rair/Rgas) exceeding 4 to 1 ppm C2H4O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO2, the electrical resistance of the former device was still at 106 Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.

Original languageEnglish
Pages43-48
Number of pages6
Publication statusPublished - 2004
EventChemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherChemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kugishima, M., Shimanoe, K., & Yamazoe, N. (2004). Sensitization of SnO2-based thick film sensor for ethylene oxide gas. 43-48. Paper presented at Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium, Honolulu, HI, United States.