Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography

Masaki Tanaka, Sunao Sadamatsu, Grace S. Liu, Hiroto Nakamura, Kenji Higashida, Ian M. Robertson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The three-dimensional structure of crack tip dislocations in single crystal silicon was observed by combining high-voltage electron microscopy and tomography. It was revealed that dislocations cross-slipped proximal to the crack tip even in the initial stages of plastic deformation. The local stress intensity factor along the crack front was calculated by taking into account the experimentally determined dislocation character. Based on these observations and calculations, a model to account for the sequential multiplication of dislocation sources along the crack front is proposed.

Original languageEnglish
Pages (from-to)508-513
Number of pages6
JournalJournal of Materials Research
Volume26
Issue number4
DOIs
Publication statusPublished - Feb 28 2011

Fingerprint

multiplication
Crack tips
Electron microscopy
Tomography
high voltages
electron microscopy
cracks
tomography
Cracks
crack tips
Electric potential
Silicon
Dislocations (crystals)
Stress intensity factors
Plastic deformation
Single crystals
stress intensity factors
plastic deformation
single crystals
silicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography. / Tanaka, Masaki; Sadamatsu, Sunao; Liu, Grace S.; Nakamura, Hiroto; Higashida, Kenji; Robertson, Ian M.

In: Journal of Materials Research, Vol. 26, No. 4, 28.02.2011, p. 508-513.

Research output: Contribution to journalArticle

Tanaka, Masaki ; Sadamatsu, Sunao ; Liu, Grace S. ; Nakamura, Hiroto ; Higashida, Kenji ; Robertson, Ian M. / Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography. In: Journal of Materials Research. 2011 ; Vol. 26, No. 4. pp. 508-513.
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