Sequential multiplication of dislocation sources along a crack front revealed by high-voltage electron microscopy and tomography

Masaki Tanaka, Sunao Sadamatsu, Grace S. Liu, Hiroto Nakamura, Kenji Higashida, Ian M. Robertson

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    The three-dimensional structure of crack tip dislocations in single crystal silicon was observed by combining high-voltage electron microscopy and tomography. It was revealed that dislocations cross-slipped proximal to the crack tip even in the initial stages of plastic deformation. The local stress intensity factor along the crack front was calculated by taking into account the experimentally determined dislocation character. Based on these observations and calculations, a model to account for the sequential multiplication of dislocation sources along the crack front is proposed.

    Original languageEnglish
    Pages (from-to)508-513
    Number of pages6
    JournalJournal of Materials Research
    Volume26
    Issue number4
    DOIs
    Publication statusPublished - Feb 28 2011

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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