Shape of SiC bulk single crystal grown by sublimation

Shinichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Sublimation
sublimation
Temperature distribution
temperature distribution
Single crystals
single crystals
Crystals
crystals
cavities
Crucibles
crucibles
Crystallization
Crystal growth
Electromagnetic fields
furnaces
crystal growth
flat surfaces
electromagnetic fields
Furnaces
Computer simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M. N., & Arai, K. (2000). Shape of SiC bulk single crystal grown by sublimation. Materials Science Forum, 338.

Shape of SiC bulk single crystal grown by sublimation. / Nishizawa, Shinichi; Kitou, Yasuo; Bahng, Wook; Oyanagi, Naoki; Khan, Muhammad Nasir; Arai, Kazuo.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

Nishizawa, S, Kitou, Y, Bahng, W, Oyanagi, N, Khan, MN & Arai, K 2000, 'Shape of SiC bulk single crystal grown by sublimation', Materials Science Forum, vol. 338.
Nishizawa S, Kitou Y, Bahng W, Oyanagi N, Khan MN, Arai K. Shape of SiC bulk single crystal grown by sublimation. Materials Science Forum. 2000 Jan 1;338.
Nishizawa, Shinichi ; Kitou, Yasuo ; Bahng, Wook ; Oyanagi, Naoki ; Khan, Muhammad Nasir ; Arai, Kazuo. / Shape of SiC bulk single crystal grown by sublimation. In: Materials Science Forum. 2000 ; Vol. 338.
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