Shape of SiC bulk single crystal grown by sublimation

Shinichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai

Research output: Contribution to journalConference article

11 Citations (Scopus)


Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.

Original languageEnglish
JournalMaterials Science Forum
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M. N., & Arai, K. (2000). Shape of SiC bulk single crystal grown by sublimation. Materials Science Forum, 338.