Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

T. Shirasawa, Tanaka Satoru, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

Original languageEnglish
Title of host publicationAdvanced Material Science and Technology
Pages15-19
Number of pages5
DOIs
Publication statusPublished - Mar 17 2011
Event7th International Forum on Advanced Material Science and Technology, IFAMST-7 - Dalian, China
Duration: Jun 26 2010Jun 28 2010

Publication series

NameMaterials Science Forum
Volume675 677
ISSN (Print)0255-5476

Other

Other7th International Forum on Advanced Material Science and Technology, IFAMST-7
CountryChina
CityDalian
Period6/26/106/28/10

Fingerprint

Core levels
oxynitrides
Silicon
Spectroscopy
shift
Chemical shift
silicon
Photoelectron spectroscopy
Model structures
spectroscopy
chemical equilibrium
photoelectric emission

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shirasawa, T., Satoru, T., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., ... Tochihara, H. (2011). Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. In Advanced Material Science and Technology (pp. 15-19). (Materials Science Forum; Vol. 675 677). https://doi.org/10.4028/www.scientific.net/MSF.675-677.15

Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. / Shirasawa, T.; Satoru, Tanaka; Muro, T.; Tamenori, Y.; Harada, Y.; Tokushima, T.; Kinoshita, T.; Shin, S.; Takahashi, T.; Tochihara, H.

Advanced Material Science and Technology. 2011. p. 15-19 (Materials Science Forum; Vol. 675 677).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shirasawa, T, Satoru, T, Muro, T, Tamenori, Y, Harada, Y, Tokushima, T, Kinoshita, T, Shin, S, Takahashi, T & Tochihara, H 2011, Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. in Advanced Material Science and Technology. Materials Science Forum, vol. 675 677, pp. 15-19, 7th International Forum on Advanced Material Science and Technology, IFAMST-7, Dalian, China, 6/26/10. https://doi.org/10.4028/www.scientific.net/MSF.675-677.15
Shirasawa T, Satoru T, Muro T, Tamenori Y, Harada Y, Tokushima T et al. Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. In Advanced Material Science and Technology. 2011. p. 15-19. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.675-677.15
Shirasawa, T. ; Satoru, Tanaka ; Muro, T. ; Tamenori, Y. ; Harada, Y. ; Tokushima, T. ; Kinoshita, T. ; Shin, S. ; Takahashi, T. ; Tochihara, H. / Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. Advanced Material Science and Technology. 2011. pp. 15-19 (Materials Science Forum).
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