Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

T. Shirasawa, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

Original languageEnglish
Title of host publicationAdvanced Material Science and Technology
PublisherTrans Tech Publications Ltd
Pages15-19
Number of pages5
ISBN (Print)9783037850497
DOIs
Publication statusPublished - 2011

Publication series

NameMaterials Science Forum
Volume675 677
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Shirasawa, T., Tanaka, S., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., Kinoshita, T., Shin, S., Takahashi, T., & Tochihara, H. (2011). Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. In Advanced Material Science and Technology (pp. 15-19). (Materials Science Forum; Vol. 675 677). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.675-677.15