Si and Cr doping effects on growth and mechanical properties of ultrananocrystalline diamond/amorphous carbon composite films deposited on cemented carbide substrates by coaxial arc plasma deposition

Mohamed Egiza, Hiroshi Naragino, Aki Tominaga, Kouki Murasawa, Hidenobu Gonda, Masatoshi Sakurai, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    Abstract

    Si and Cr doped ultrananocrystalline diamond/amorphous carbon composite films were deposited on cemented carbide (WC-Co) substrates by using coaxial arc plasma deposition with Si and Cr blended graphite targets. The undoped films deposited at room temperature and a repetition rate of arc discharges of 1 Hz have the maximum hardness of 51 GPa and Young’s modulus of 520 GPa. With increasing substrate temperature and repetition rate, the hardness and modulus are degraded, which might be because the growth of sp2 bonds is thermally enhanced. The doping of Cr and Si degrades the hardness and modulus. From energy-dispersive X-ray spectroscopic measurements, the diffusion of Co atoms from the substrates into the films were observed for the Si-doped films. Since the Co diffusion induce the graphitization due to the catalytic effects, the degraded hardness and modulus of the Si doped films should be attributable to the catalytic effects of Co. For the Cr-doped films, the degraded hardness and modulus might be because of the Co catalytic effects being enhanced by the bombardment of Cr atoms whose atomic weight is much larger than that of C and the formation of chromium carbide. It was found that the doping of Si and Cr for the deposition of UNCD/a-C films deposited on WC-Co by CAPD is not effective for the improvement of the hardness and modulus

    Original languageEnglish
    Pages (from-to)32-36
    Number of pages5
    JournalEvergreen
    Volume3
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2016

    Fingerprint

    Plasma deposition
    Diamond
    Carbon films
    Amorphous carbon
    Composite films
    diamond
    Carbides
    mechanical property
    Diamonds
    hardness
    Hardness
    Doping (additives)
    plasma
    substrate
    Mechanical properties
    carbon
    Substrates
    Atoms
    Graphitization
    graphitization

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Surfaces, Coatings and Films
    • Management, Monitoring, Policy and Law

    Cite this

    Si and Cr doping effects on growth and mechanical properties of ultrananocrystalline diamond/amorphous carbon composite films deposited on cemented carbide substrates by coaxial arc plasma deposition. / Egiza, Mohamed; Naragino, Hiroshi; Tominaga, Aki; Murasawa, Kouki; Gonda, Hidenobu; Sakurai, Masatoshi; Yoshitake, Tsuyoshi.

    In: Evergreen, Vol. 3, No. 1, 01.01.2016, p. 32-36.

    Research output: Contribution to journalArticle

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    abstract = "Si and Cr doped ultrananocrystalline diamond/amorphous carbon composite films were deposited on cemented carbide (WC-Co) substrates by using coaxial arc plasma deposition with Si and Cr blended graphite targets. The undoped films deposited at room temperature and a repetition rate of arc discharges of 1 Hz have the maximum hardness of 51 GPa and Young’s modulus of 520 GPa. With increasing substrate temperature and repetition rate, the hardness and modulus are degraded, which might be because the growth of sp2 bonds is thermally enhanced. The doping of Cr and Si degrades the hardness and modulus. From energy-dispersive X-ray spectroscopic measurements, the diffusion of Co atoms from the substrates into the films were observed for the Si-doped films. Since the Co diffusion induce the graphitization due to the catalytic effects, the degraded hardness and modulus of the Si doped films should be attributable to the catalytic effects of Co. For the Cr-doped films, the degraded hardness and modulus might be because of the Co catalytic effects being enhanced by the bombardment of Cr atoms whose atomic weight is much larger than that of C and the formation of chromium carbide. It was found that the doping of Si and Cr for the deposition of UNCD/a-C films deposited on WC-Co by CAPD is not effective for the improvement of the hardness and modulus",
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    AU - Tominaga, Aki

    AU - Murasawa, Kouki

    AU - Gonda, Hidenobu

    AU - Sakurai, Masatoshi

    AU - Yoshitake, Tsuyoshi

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